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l-band high power gaas fet features ? high output power: pout=46.0dbm(typ.) ? high gain: gl=13.0db(typ.) ? high pae: add=52%(typ.) ? broad band: 2.5~2.7ghz ? hermetically sealed package absolute maximum ratings (case temperature tc=25 o c) electrical character istics (case temperature tc=25 o c) case style: ik edition 1.1 oct 2003 1 FLL410IK-3C note : based on eiaj ed-4701 c-111a(c=100pf, r=1.5k ? ) item symbol rating unit drain-source voltage gate-source voltage total power dissipation storage temperature v ds v gs pt t stg 15 -5 100 -65 to +175 v v w o c channel temperature t ch 175 o c linear gain *1 limit item symbol test conditions unit drain current output power i dss p out a v db dbm min. typ. max. drain current i dsr v a -0.1 -0.3 -0.5 -5.0 - - 45.0 46.0 - 12.0 13.0 - - 5.9 7.6 v ds =12v f=2.6 ghz i ds =3a pin=35.0dbm power-added efficiency add % - 52 - - 4.0 - v ds =5v, v gs =0v pinch-off voltage v p v ds =5v, i ds =110ma gate-source breakdown voltage v gso i gs =-1.1ma g l thermal resistance r th channel to case - 1.3 1.5 o c/w description the FLL410IK-3C is a partially matched 40 watt gaas fet that is designed for use in 2.5 ? 2.7 ghz band amplifiers. this new product is uniquely suited for use in mmds applications as it offers excellent linearity, high efficiency, high gain, long term reliability and ease of use. fujitsu?s stringent quality assur ance program assures the highest reliability and consistent performance. esd class 2000v ~ * gl is measured at pin=22.0dbm recommennded operating condition(case temperature tc=25 o c) item symbol condition unit dc input voltage gate current v ds i gf 12 v ma limit r g =5 ? operating channel temperature tch 145 o c gate current i gr r g =5 ? 88 -25 ma
32 34 36 38 40 42 44 46 48 2.35 2.45 2.55 2.65 2.75 2.85 frequency [ghz] output power [dbm ] vds=12v, ids(dc)=3a FLL410IK-3C 2 output power vs. input power imd vs. total output power output power , power added efficiency vs. total input power pin=22dbm pin=26dbm pin=30dbm pin=34dbm pin=36dbm 2a im3 im5 3a 5a 2a 3a 5a 32 34 36 38 40 42 44 46 48 21 23 25 27 29 31 33 35 37 input power [dbm] output power [dbm ] 0 10 20 30 40 50 60 70 80 power added efficiency[%] vds=12v, ids(dc)=3a, f=2.6ghz -60 -56 -52 -48 -44 -40 -36 -32 -28 -24 -20 24 26 28 30 32 34 36 38 40 42 44 total output power [dbm] imd [dbc] vds=12v, f=2.6ghz, df=5mhz l-band high power gaas fet
FLL410IK-3C 3 s-parameter vds=12v, ids=3.0a s11 s22 2.6ghz 25 0 +10j +25j +50j +100j +250j -10j -25j -50j -100j -250j 10 freq [ghz] mag ang mag a ng mag a ng mag ang 1.50 0.95 139.13 0.66 5.71 0.01 -7.76 0.85 137.80 1.60 0.94 136.13 0.73 -1.34 0.01 -21.24 0.83 134.28 1.70 0.92 132.48 0.83 -11.38 0.01 -27.54 0.80 130.79 1.80 0.91 129.08 0.93 -21.69 0.01 -37.64 0.76 127.82 1.90 0.89 125.19 1.08 -33.36 0.01 -48.85 0.72 125.28 2.00 0.87 121.65 1.26 -45.28 0.01 -64.79 0.68 122.79 2.20 0.83 112.20 1.82 -76.40 0.02 -97.72 0.61 119.58 2.30 0.78 106.32 2.27 -95.83 0.02 -122.75 0.57 117.16 2.40 0.70 97.54 2.86 -118.23 0.03 -148.63 0.52 112.58 2.50 0.52 85.55 3.75 -149.12 0.04 173.08 0.40 105.59 2.60 0.22 114.34 4.29 166.53 0.04 127.14 0.22 139.17 2.70 0.52 153.17 3.43 121.10 0.04 82.29 0.47 165.62 2.80 0.72 139.88 2.23 89.90 0.03 50.87 0.65 155.17 2.90 0.82 129.39 1.54 71.09 0.02 27.82 0.72 145.97 3.00 0.85 121.63 1.10 57.03 0.02 15.34 0.76 138.08 3.10 0.87 116.02 0.87 45.39 0.01 -3.89 0.79 130.98 3.20 0.88 110.41 0.66 35.06 0.01 -7.86 0.82 125.09 3.30 0.89 105.71 0.56 28.49 0.01 -16.93 0.84 120.80 3.40 0.90 100.75 0.47 20.22 0.01 -25.52 0.86 117.16 3.50 0.91 97.00 0.42 15.07 0.01 -22.89 0.86 113.34 s11 s21 s12 s22 s12 s21 0.3 6 180 0 -90 +90 scale for |s 21 | scale for | s 12 | 2.6ghz 2 2.6ghz l-band high power gaas fet
FLL410IK-3C 4 board layout(reference) r=3.5, t=0.6mm unit : mm r=3.5 r=3.5 l-band high power gaas fet
package out line pin assigment 1 : gate 2 : source 3 : drain 4 : source unit : mm FLL410IK-3C 5 l-band high power gaas fet
for further information please contact : fujitsu compound semiconductor, inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. tel: (408) 232-9500 fax: (408) 428-9111 www.fcsi.fujitsu.com fujitsu quantum devices europe ltd. network house norreys drive maidenhead, berkshire sl6 4fj tel: +44 (0) 1628 504800 fax: +44 (0) 1628 504888 fujitsu limited reserves the right to change products and specificat ions without notice. the information does not convey any license under rights of fujitsu limited or others. ? 2004 fujitsu compo und semiconductor, inc. printed in u.s.a. caution fujitsu compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: ? do not put these products into the mouth. ? do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by- products are dangerous to the human body if inhaled, ingested, or swallowed. ? observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FLL410IK-3C 6 fujitsu quantum devices singapore pte ltd. hong kong branch rm. 1101, ocean centre, 5 canton rd. tsim sha tsui, kowloon, hong kong tel: +852-2377-0227 fax: +852-2377-3921 fujitsu quantum devices ltd. 1000 kamisukiahara, showa-cho nakakomagun, yamanashi 409-3883, japan (kokubo industrial park) tel: +81-55-275-4411 fax: +81-55-275-9461 fujitsu quantum devices limited business development division hachioji daiichi-seimei bldg., 11 th floor 3-20-6 myojin-cho hachioji-city, tokyo 192-0046, japan tel: +81-426-43-5885 fax: +81-426-43-5582 l-band high power gaas fet

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